In 1984, Fasol recognized Japan's importance in technology and the relatively weak links with the rest of the world, and decided to focus on Japan in addition to physics and business. Fasol's company helps Japanese technology companies globalize, and foreign companies to succeed and grow in Japan. Currently he is advisor to the CEO of a major Japanese electrical engineering company, helping to double their business within five years. He founded and organizes the Ludwig Boltzmann Symposia focussing on energy, entropy and leadership.
Eurotechnology Japan KK
Gerhard Fasol is Founder, Producer and CEO of Eurotechnology Japan KK which he founded in 1997 in Tokyo. Eurotechnology-Japan focusses on energy, IT and telecommunications, and works with many foreign companies on their growth in Japan, and has worked on 100s of projects since 1997. Prepared SIEMENS' entry into Japan's environmental technology markets, worked on NTT-Communications entry into Europe, helped a French pharmaceutical company acquire a Japanese factory.
(according to The Economist of June 6, 2015, there are 274 (0.7%) non-Japanese Board Directors out of 40,000 Board Directors at publicly traded Japanese companies).
Corporate Governance reforms in Japan
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Semiconductor electronics R&D as Faculty of Tokyo University, Cambridge University, Trinity College/Cambridge:
Previously, Gerhard was a faculty member of the Electrical Engineering department of Tokyo University, and was one of the first foreigners to build an international research group in Japan. In addition, Gerhard was the first non-Japanese to complete a 'Sakigake' research project at Japan's Science and Technology Development Corporation.
Before coming to Japan, he was a manager of Hitachi's Cambridge Research Laboratory; a permanent faculty member in the physics department at the Cavendish Laboratory of Cambridge University; a director of studies and teaching fellow at Trinity College; and a member of the scientific staff of the Max Planck Institute for Solid State Research in Stuttgart.
He is frequently asked to brief VIPs about Japan's technology sector and is a regular commentator for CNBC, BBC and other global programs on financial results and trends of major technology companies in Japan, Korea, and China.
Gerhard Fasol is also one of the few Non-Japanese who has served as Japanese Government Official (国家公務員).
Gerhard Fasol graduated with a PhD in Physics of Cambridge University.
Corporate Governance Reforms: How the Way Japanese Corporations Take Decisions is Changing SJCC Swiss-Japanese Chamber of Commerce Friday 12 October 2018, 18:30-19:45, JETRO Office Geneva Prime Minister Abe’s corporate governance reforms are arguably one of the biggest success stories of his reform program to promote Japan’s economic growth. Japan’s Government in coordination with the Tokyo …
Corporate governance reforms: making Japanese corporations great again? Understanding how Japanese Boards of Directors function helps you close deals Monday, May 28, 2018, 19:00-21:00 at CCIFJ Stimulating Japanese companies’ growth is a key element of Prime Minister Abe’s economic growth policies. For companies to grow, management needs to be improved, Boards of Directors need to …
Corporate Governance Reforms in Japan Monday, March 12, 2018, 12:00 – 13:30 at the Foreign Correspondents Club in Japan FCCJ While many Japanese corporations are still admired around the world, too many have for years suffered sluggish growth and low profitability. A string of corporate scandals and failures have shocked the pubic and corroded confidence …
Gerhard Fasol is physicist and entrepreneur in Tokyo/Japan, founded Eurotechnology Japan KK in 1997
Gerhard Fasol – Business projects
Gerhard Fasol has acquired and managed 100s of business projects, for which in all cases he had the final delivery responsibility to clients.
helped French pharmaceutical company acquire a pharmaceutical factory near Tokyo, including managing the environmental and regulatory due diligence
Strategy, business development
For a major Japanese glass manufacturer: global marketing strategy to introduce environmentally friendly alternative lighting systems to global markets, following initial product success in Japan
For one of the largest global electrical manufacturers: comprehensive research and mapping of Japan’s environmental technology markets covering most areas, including waste incineration, renewable energies, co-generation, recycling, soil pollution, lean production, etc and prepare market entrance strategies for European multi-national to enter Japan’s environmental technology markets for products and services
For one of Japan’s largest telecommunications companies:
map competitive landscape of European internet services and internet markets
prepare market entrance strategies for 16 different industry areas
prepare partnership/ investment/ M&A discussions with major European telecommunications group s
introduce potential European acquisition targets
Working with a major Japanese electronics manufacturers helping to double revenues within about 5 years
Market research, worked on 100s of market research projects, including:
Japan’s environmental technology markets
Japan’s energy markets
Japan’s renewable energy markets, including particularly solar energy generation
Japan’s telecommunications markets
Japan’s emergency telecommunications markets
Japan’s market for mobile phone base stations
… and 100s more areas….
and including our multi-client market research reports on Japan’s telecom and technology sectors for download here.
environmental and regulatory due diligence on a pharmaceutical factory
technology, product, management and business due diligence on a Japanese fuel additive company for an investment fund considering investment
Analyst work and advisory for fund managers and financial industry mainly on technology inflections and impact on investments
estimate impact of potential outcome of patent litigation in the GaN LED field
electronic money and mobile payment
GaN LEDs and solid state lighting
software for smart phones
Energy and renewable energy
market research and strategy advisory for a US investment fund on Japan’s energy and renewable energy sectors
currently working on solar electricity generation plants, including a pipeline of about 50 projects with a combined power of around 950 MegaWatt
Customers include many of the worlds largest corporations including:
and 100s more…
European Union (EU)
Finland’s research agency TECES
Japan’s Science and Technology Agency
and many more…
as well as many small and medium-sized corporations
( March 2014 – March 2018) GMO Cloud KK [Tokyo Stock Exchange 3788]: Board Director and Member of the Board's Supervisory Committee (取締役 兼 監査等委員)
GMO Cloud KK is a global SaaS and cybersecurity group, and includes the PKI Cybersecurity infrastructure group Globalsign.
Gerhard Fasol is physicist and entrepreneur in Tokyo since 1991
fluent in Japanese (written/spoken) at Board of Director level of listed Japanese corporation.
Ludwig Boltzmann Forum, since 2009. The Ludwig Boltzmann Forum is a global leadership platform bringing science and technology to leadership, creator, owner and curator
Eurotechnology Japan KK is a technology focused business development, strategy and M&A advisory + implementation firm in Tokyo / Japan.
Customers include large and small American, European and Japanese corporations, investment funds, Government agencies (European Union, Government of Finland’s TEKES, Government of Japan’s JRDC) and about 10 Embassies in Tokyo.
Services for corporate customers: M&A, strategy, sales development, partnerships, and execution for Japan market entry and business expansion in Japan (for EU, American, Chinese corporations)
Globalization, market entry, strategy and business development, and implementation to Europe (for Japanese corporations)
Customer specific market research and strategy development Overview market research reports for download
Having worked since 1984 with Japan’s high-technology sector, Fasol is frequently requested to brief VIPs about Japan’s technology sector. Fasol has briefed the President of Germany, Horst Koehler, US Senator Jeff Bingaman (at that time Chairman of the Defence Committee and the Technology Committee of the US Senate), former President of the European Parliament and French Vice-Minister of Industry Mme Nicole Fontaine, the Technology Committee of the German Parliament (Bundestag), the top management team (CEO, CFO, CTO, Head of Strategy …) of telecom operator TeliaSonera and many others.
1993-1996 Tokyo University, Department of Electrical and Electronic Engineering, Institute of Industrial Science: Associate Professor
Research group leader on new electron devices, spin-electronics. Fasol was one of the first researchers to research spin-electronics devices in Japan, submitted several patent applications on inventions for spin-electronics devices.
Main research results: invented new method to grow ultra-thin (4 nano-meter) metallic and magnetic wires, developed numeric methods to solve Schrödinger Equation in strong magnetic fields for simulation and visualization of electron wave motion in nano devices
July – Sept 1989 and 1991: Tokyo University, Research Center for Advanced Science and Technology (RCAST), Associate Professor of the NTT Endowed Chair for Telecommunications
Starting research on spin-electronic devices as one of the first researchers in this field in Japan
Research on spin-electronic devices, and numerical simulation work
1990-1991: Hitachi Cambridge Laboratory, Laboratory manager and Chief Scientist
Research on nano electronic devices, planning and research strategy during the start-up phase of the Hitachi Cambridge Laboratory
1986 – 1990: Cambridge University, UK, Department of Physics, Cavendish Laboratory: University Lecturer (with tenure)
Research: Raman spectroscopic laboratory with state of the art spectroscopic equipment, shared femto-second laboratory, numerical research on Gallium-Arsenide and Silicon-Germanium superlattice devices
Results: invented and developed methods to determine band structure from luminescence of electrons cascading with phone emission in ultra-fast femto second processes, characterization methods for single layer Ge-Si superlattices from phonon Raman spectroscopy, research on coupled plasmon oscillations in superlattices, investigations of single-electron excitations in coupled electron layers in superlattice devices
Research cooperation with British Telecom Laboratories, France Telecom Research, NTT research laboratories
Research funding as principal investigator for a number of British Government grants, grant by the British Council for cooperation with Spain, by the French Foreign Ministry for research cooperation with France, and many other research projects
Teaching: teaching responsibilities of Cambridge University Lecturer. 5 PhD students and several Post-Doctoral students, University lectures, post graduate lectures, practical classes, and University Examinations (undergraduate and PhD)
1988: promoted to Tenure at Cambridge University
1986 – 1990: Trinity College, Cambridge: Research Fellow, Assistant Lecturer and Director of Studies in Natural Sciences
Responsible for 24 undergraduate students as Director of Studies
Education: Trinity College supervisions
May 1990: Ecole Normale Superieure, Paris: Invited Professor
in addition: research award by the French Foreign Ministry to invite three French researchers to Fasol’s laboratory at Cambridge University
June-September 1987, June-September 1988: Visiting researcher at RIKEN, Japan, and Tokyo University, Dept of Electrical and Electronic Engineering
build research cooperation between Fasol’s lab at the Cavendish Laboratory, Cambridge, and Japanese research groups
September 1984: first visit to Japan to help build research cooperation with NTT fundamental research laboratories
Purpose: help build research cooperation between Max-Planck-Institut in Stuttgart and NTT Fundamental Research Labs
1982-1986: Max-Planck-Institut for Solid State Research (Stuttgart, Germany): Staff Research Scientist
Research on fundamental electronic and phonen properties of semiconductor superlattices using different methods of optical spectroscopy, Raman spectroscopy. Major research results: characterization of coupled plasmon oscillations in superlattice devices, invented and developed methods to determine band structure information from hot electron spectroscopy
1981 – 1985: Trinity College, University of Cambridge: Research fellow
1982: Cambridge University, Trinity College: PhD in Physics
Research Thesis: time resolved spectroscopy of amorphous semiconductors (amorphous phosphorus, amorphous germanium). Main results: discovered triplet states in amorphous phosphorus, identified defect luminescense with widely different decay times, developed and built state-of-the-art equipment to measure time-resolved luminescence spectroscopy with pico-second time resolution
1978: Ruhr-University Bochum (Germany): Diplom Thesis in Physics (awarded the Prize for the best thesis of the year by the President (Rektor) of the Ruhr-University
Diplom thesis: superconductivity of Vanadium 3 Silicon under high pressure
Developed and built equipment for electrical measurements under record high hydrostatic pressures, conducted measurements, discovered new phase transformation
Research funding record – Gerhard Fasol
Japan Science and Technology Agency (JST) /Sakigake,
Tokyo University (specially selected research project of the year at Institute of Industrial Science,
G. Fasol and J. S. Schilling, "New hydrostatic pressure cell to 90 kbar for precise electrical and magnetic measurements." Review of Sci. Instruments 49, 1722 (1978) doi: http://dx.doi.org/10.1063/1.1135323
G. Fasol, "Time-resolved luminescence study of amorphous phosphorus: Temperature and excitation energy dependence" Journal of Physics C18, 1729 (1985)
G. Fasol, P. Ruden and K. Ploog, "Raman scattering from elementary excitations in GaAs with nipi doping superlattices" Journal of Physics C 17, 1395 (1984)
G. Fasol, M. Cardona, W. Hönle and H. G. von Schnering, "Lattice dynamics of Hittorf’s phosphorus and identification of structural groups and defects in amorphous red phosphorus", Solid State Communications 52, 307 (1984)
G. Fasol, K. Ploog and E. Bauser, "Luminescence from hot electrons relaxing by LO phonon emission in p-GaAs and GaAs doping superlattices" Solid State Communications 54, 383 (1985)
G. Döhler, G. Fasol, T. S. Low, J. N. Miller and K. Ploog, Solid State Communications 57, 563 (1986), "Observation of tunable room temperature photoluminescence in GaAs doping superlattices."
G. Fasol, H. P. Hughes and K. Ploog. Proceeedings of the 13th Yamada Conference on Electronic Properties of Two–dimensional Systems, Kyoto 1985. "Resonance Raman Scattering by Intrasubband Excitations of GaAs Multi–Quantum–Well Structures." Surface Science 170, 497 (1986).
G. Fasol and H. P. Hughes. Proceedings of the 12th Inst. Symp. on GaAs and related Compounds, Karuizawa, Japan, 1985, edited by M. Fujimoto. Institute of Physics Conference Series No. 79 Adam Hilger Ltd, Bristol p. 253 (1986) "Hot Electron Luminescence in GaAs: A new Method for Band Structure Studies."
G. Fasol and H. P. Hughes. "Band Structure Determination of GaAs from Hot Electron Luminescence." Phys. Rev. B 33, 2953 (1986).
G. Fasol, N. Mestres, H. P. Hughes, A. Fischer and K. Ploog. "Raman Scattering by Coupled Layer Plasmons and In–Plane 2D Single Particle Excitations in Multi–Quantum–Well Structures". Physical Review Letters 56, 2517 (1986)
F. Gompf, G. Fasol, W. Hönle and J. B. Suck. "The Phonon Density of States of Hittorf’s Phosphorus in Comparison to those of the black orthorhomic and the red amorphous modifications: an inelastic neutron scattering investigation." Proceedings of the Second International Conference on Phonon Physics, (Budapest), ed. by J. Kollar, N. Kroo, N. Menyhard and T. Siklos, World Scientific, Singapur, p. 82 (1985)
M. Cardona, N. E. Christensen and G. Fasol. "The Terms Linear in k in the Band Structure of Zincblende–Type Semiconductors." Physical Review Letters 56 2831 (1986)
T. Suemoto, G. Fasol and K. Ploog. "Resonant Raman scattering in p–type GaAs-AlxGa1-xAs-AlAs quantum wells." Physical Review B 34, 6034 (1986)
G. Fasol, N. Mestres, A. Fischer and K. Ploog. "Raman Measurements of Coupled Layer Plasmons, Single Particle Excitations and Scattering Times in the Layered 2D electron gas of modulation doped GaAs–AlGaAs Multiquantum wells." Proceedings of the 18th Int. Conf. on the Physics of Semiconductors, Stockholm (1986), ed. by O. Engström, World Scientific Publ. Co. (Singapore), p. 679.
M. Cardona, N. E. Christensen and G. Fasol. "Off–Diagonal Spin–Orbit Coupling Effects in Zincblende–Type Semiconductors". Proceedings of the 18th Int. Conf. on the Physics of Semiconductors, Stockholm, 1986, ed by O. Engström, World Scientific Publ. Co. (Singapore), p.1133.
T. Suemoto, G. Fasol and K. Ploog. "Determination of Confined States and Band Gap Offset from Excitation Spectra of Resonant Raman and Luminescence in p–type GaAs Multi–Quantum–Well." Proceedings of the 18th Int. Conf. on the Physics of Semiconductors, Stockholm, 1986, ed. by O. Engström, World Scientific Publ. Co. (Singapore), p. 683.
G. Fasol, N. Mestres, M. Dobers, A. Fischer and K. Ploog, "Determination of Single Particle Relaxation Time from Light Scattering Spectra in Modulation Doped Quantum Wells". Physical Review B 36, 1565 (1987)
T. Suemoto, G. Fasol and K. Ploog, "Conduction–band Nonparabolicity in p–type Quantum Wells and Fourier Determination of the Hole Wavefunctions by Resonant Raman Scattering", Phys. Rev. B 37, 6397 (1988)
G. Fasol, N. Mestres, A. Fischer and K. Ploog, "Coupled Plasmons and Single Particle Excitations in the Two–Dimensional Electron Gas", Physica Scripta T19, 109 (1987).
M. Cardona, N. E. Christensen und G. Fasol, "Relativistic Band Structure and Spin-Orbit Splitting of Zincblende–Type Semiconductors", Physical Review B 38, 1806 (1988)
G. Fasol, N. Mestres, M. Dobers, A. Fischer and K. Ploog, "Plasmons and Single Particle Excitations in Modulation Doped Quantum Wells", Proceedings of the 3rd Int. Conference on Modulated Semiconductor Structures (MSS–III), Montpellier 1987, Journal de Physique Colloques 48, C5 581-584, (1987) doi: http://dx.doi.org/10.1051/jphyscol:19875126
T. Suemoto, G. Fasol and K. Ploog, "Determination of Binding Energies and Wave Functions in Quantum Wells from Raman Resonance Cross–section Measurements", Proceedings of the 3rd International Conference on Modulated Semiconductor Structures (MSS—III), Montpellier 1987, Journal de Physique, 48, C5 507-510 (1987). doi: http://dx.doi.org/10.1051/jphyscol:19875108
G. Fasol, M. Mestres und K. Ploog, "In-Plane Electronic Excitations in GaAs–GaAlAs Modulation Doped Quantum Wells", Proceedings of the NATO workshop on "Properties of Impurity States in Semiconductor Superlattices", 7—11 September 1987, edited by C. Y. Fong, NATO Workshop series, Plenum Press, (New York)
G. Fasol, M. Tanaka, H. Sakaki and Y. Horikoshi, "Interface Roughness and the Dispersion of Confined LO Phonons in GaAs–AlAs Quantum Wells", Physical Review B 38, 6056 (1988).
G. Fasol, R. D. King–Smith, D. Richards, U. Ekenberg, N. Mestres and K. Ploog, "Intra–Well and Inter-Well Coupling of Plasmons in Multi—Layer Modulation Doped GaAs/AlGaAs Quantum Wells", Physical Review B 39, 12695 (1989).
G. Fasol, T. Suemoto, U. Ekenberg and K. Ploog, "Fourier Determination of the Hole Wavefunctions in p–type Modulation Doped Quantum Wells by Resonant Raman Scattering", in "Bandstructure Engineering in Semiconductor Microstructures", ed. by R. A. Abram and M. Jaros, Plenum Press (New York, 1989), p 325.
G. Fasol, R. D. King–Smith, U. Ekenberg, N. Mestres and K. Ploog, "Hierarchy of Intra–Well and Inter–well Coupling of Plasmons in Modulation Doped Quantum Wells", Proceedings of the 19th International Conference on the Physics of Semiconductors, Polish Academy of Sciences—Institute of Physics, Warsawa, (1988), p.259.
G. Fasol, "Comments on some manuscripts by Ludwig Boltzmann", in "Ludwig Boltzmann–Gesamtausgabe", Band 8, p. 87 ed. by R. Sexl, Akademische Druck- und Verlagsanstalt Graz (1982).
G. Fasol, "A liquid of fractional charges", Nature 334, 568 (1988)
G. Fasol, "Interference rules the waves", Nature, 338, 464 (1989).
G. Fasol, "The Physics of Laser Light and it’s Interaction with Matter", in "Recent Advances in Cardiovascular Surgery", ed. by Bruno Reichart, Verlag R. S. Schulz, (Starnberger See), p. 391 (1989)
G. Fasol, M. Tanaka, H. Sakaki and Y. Horikoshi, "Interface Roughness and Confined LO Phonons in Quantum Wells", MBE–V Conference, Sapporo, 1988, Journal of Crystal Growth 95, 75—78 (1989).
R. A. Ghanbari and G. Fasol, "Calculations of Phonons in  and  Si–Ge Strained Layer Superlattices", Solid State Communications 70, 1025—1029 (1989).
R. A. Ghanbari, J. D. White, G. Fasol, C. J. Gibbings, and C. G. Tuppen, "Phonon Frequencies for Si–Ge Strained–Layer Superlattices Calculated in a three–dimensional Model", Physical Review B 42, 7033 (1990).
J. White, G. Fasol, R. A. Ghanbari, C. J. Gibbings, and C. G. Tuppen, "Calculation of Energies and Raman Intensities of Confined Phonons in Si-Ge
Strained Layer Superlattices", Thin Solid Films 183, 71—77 (1989)
B. Jusserand, D. R. Richards, G. Fasol, G. Weimann, and W. Schlapp, "Single Particle Excitations and Plasmons in a Single Asymmetric Modulation-Doped GaAs Quantum Well", Surface Science, 229, 394-397 (1990).
W. Hackenberg and G. Fasol, "Determination of the LO Phonon and $#Gamma #rightarrow L$ Intervalley Scattering Time in GaAs From Hot Luminescence Spectroscopy", Solid-State Electronics 32, 1247—1251, (1989)
G. Fasol, W. Hackenberg, H. P. Hughes, K. Ploog, E. Bauser, and H. Kano, "Continuous-wave Spectroscopy of femtosecond carrier scattering in GaAs", Physical Review B 41, 1461 (1990).
D. Richards, G. Fasol, and K. Ploog, "Light Scattering Determination of Subband Structure and Population of Modulation–Doped Multi–Quantum Wells", Applied Physics Letters 56, 1649 (1990).
G. Fasol, D. Richards, B. Jusserand, D. King-Smith, K. Ploog, and G. Weimann, "Raman Light Scattering Characterisation of Electrons in Modulation Doped Quantum Wells: A Contact–Free Optical Method to Determine Carrier Concentrations", Proceedings of the 7th International Workshop on Future Electron Devices, Toba, Japan, (1989)
D. Richards, G. Fasol, and K. Ploog, "Electronic Raman Scattering from Modulation Doped Quantum Wells", in "Light Scattering in Semiconductor Structures and Superlattices", D. J. Lockwood and J. F. Young, ed., NATO Workshop Proceedings Series Vol. B273, Plenum Press, New York, p. 543 (1991).
J. D. White, G. Fasol, R. A. Ghanbari, M. A. Gell, C. J. Gibbings, and C. G. Tuppen, "Optical Detection of Biatomic Sheets of Silicon in Si–Ge Superlattices", Applied Physics Letters 57, 1523-1525 (1990).
J. D. White, G. Fasol, R. A. Ghanbari, M. A. Gell, C. J. Gibbings, and C. G. Tuppen, "Vibrational Properties of Si–Ge Superlattices incorporating Biatomic Sheets of Silicon and Germanium", Physical Review 43, 1685-1691 (1991).
G. Fasol, D. Richards, and K. Ploog, "Electronic Raman Scattering from Plasmons in Modulation Doped Quantum Wells", in "Condensed Systems of Low Dimensionality", ed. by J. L. Beeby, NATO Workshop Proceedings Series, Plenum Press, New York (1991), p. 35-49.
J. D. White and G. Fasol, "Phonons in Low–Dimensional Systems", in "Physics of Low-Dimensional Semiconductor Structures", ed. by P. Butcher, N. H. March and M. P. Tosi, Plenum Press, (New York, 1993), p. 57.
D. Richards, G. Fasol, and K. Ploog, "Raman Scattering Verification of nonpersistent Optical Control of Electron Density in a Heterojunction", Appl. Phys. Letters 57, 1099-1101 (1990).
W. Hackenberg and G. Fasol, "Polar Optic Phonon and Gamma-L Intervalley Scattering Times in GaAs from Steady–State Hot–Electron Luminescence Spectroscopy", Applied Physics Letters 57, 174-176 (1990).
J. Wagner, M. Ramsteiner, D. Richards, G. Fasol, and K. Ploog, "Effect of Spatial Localization of dopant Atoms on the Spacing of Electron Subbands in delta –doped GaAs:Si", Applied Physics Letters 58, 143-145 (1991).
G. Fasol, D. Richards, J. D. White, C. J. Gibbings, and C. G. Tuppen, "Raman Spectroscopy of low–dimensional Structures", Semicond. Science and Technology 5, 1168 (1990)
D. Richards, G. Fasol, and K. Ploog, "Raman scattering determination of non– persistent optical control of electron density in a heterojunction", Proceedings of SPIE Conference, Aachen, 1361, (1990).
J. D. White, M. A. Gell, G. Fasol, C. J. Gibbings, and C. G. Tuppen, "Raman Scattering characterisation of direct bandgap Si–Ge superlattices", Proceedings of SPIE Conference, Aachen, 1361, (1990).
J. D. White, M. A. Gell, W. C. Shih, W. M. Stobbs, G. Fasol, C. J. Gibbings and C. G. Tuppen, "Thermal stability of biatomic sheets of Si in Si–Ge
superlattices", manuscript for submission.
D. Richards, J. Wagner, M. Ramsteiner, U. Ekenberg, G. Fasol and K. Ploog, "Electronic structure and potential profile of the quantum well at an asymmetrically broadened Si $#delta$–layer in GaAs", manuscript for submission to Physical Review B.
D. Richards, J. Wagner, M. Ramsteiner, U. Ekenberg, G. Fasol and K. Ploog, "Effect of Spatial Localisation of Dopant Atoms on the Confining Potential and Electron Subband Structure in $#delta$-Doped GaAs:Si", Surface Science 267, 61-64 (1992).
B. Jusserand, D. R. Richards, B. Etienne, H. Peric, and G. Fasol: "Electronic Raman Scattering on Highly doped Single Quantum Wells" , Surf. Science 263, 527-530 (1992).
W. Hackenberg, G. Fasol, and H. Kano, "Hot Electron Scattering with Cold Plasma in GaAs from CW Hot Electron Luminescence Spectroscopy", Semicond. Science and Technology, 7, B26-B28, (1992).
G. Fasol, "Electron Dephasing Due to Coulomb Interaction", Applied Physics Letters 59, 2430-2432 (1991)
G. Fasol, "Absence of Low Temperature Saturation of Electron–Electron Scattering in a Single Mode Quantum Wire", Applied Physics Letters, 61, 831-833 (1992).
G. Fasol and H. Sakaki, "Effects of Electron–Electron Scattering on Quantum Wave Devices", Solid State Communications, 84, 77-80 (1992).
G. Fasol and H. Sakaki, "Electron-Electron Scattering in Quantum Wells and Wires", Proceedings of the 19th Int. Symposium on Gallium Arsenide and Related Compounds, (Karuizawa 1992), Institute of Physics Conference Series No. 129, p. 311 (1992).
G. Fasol and H. Sakaki, "Spontaneous Spin-Polarization of Ballistic Electrons in Single Mode Quantum Wires Due to Spin Splitting", Applied Physics Letters, 62, 2230-2232 (1993).
G. Fasol and H. Sakaki, "Electron-electron Scattering in Quantum Wires and its Possible Suppression due to Spin Effects", Physical Review Letters, 70, 3643-3646 (1993).
G. Fasol, "Can we reduce Electron-Electron Scattering to Increase Electron Coherence Length and Reduce Noise in Quantum Wave Devices?", Proceedings of the Solid State Devices Meeeting, (Tsukuba 1992).
G. Fasol, "Calculation of Electron Coherence Lengths for Quantum Wires", in: 21st International Conference on the Physics of Semiconductors, ed. by Ping Jiang and Hou-Zhi Zheng, World Scientific, (Singapore, 1992), p. 1411.
G. Fasol, Y. Nagamune, J. Motohisa und H. Sakaki, "Determination of Quantum Wire Potential and Hot Electron Spectroscopy Using Point Contacts", Surface Science, 305, 620-623 (1994).
G. Fasol and H. Sakaki, "Prediction of Spin-Polarization Effects in Quantum Wire Transport", Japanese Journal of Applied Physics, 33, 879-886 (1994).
G. Fasol, "Electron-Electron Pair Scattering in the Two-, and One-Dimensional Electron Gas Including Effects due to Electron Spin", submitted to Physical Review B.
G. Fasol and H. Sakaki, "Spontaneous Spin Polarization in Quantum Wires", Philosophical Magazine, 70, 601-616 (1994).
G. Fasol and H. Sakaki, "Spontaneous Spin Polarization due to Electron- Electron Interaction in Quantum Wires", in "Nanostructures and Quantum Effects", edited by H. Sakaki and H. Noge, [Proceedings of the JRDC Int. Symposium on Nanostructures and Quantum Effects, 17—18 Nov. 1993, Tsukuba (Japan)], Springer-Verlag, Berlin, p. 121-130 (1994).
G. Fasol, "Simulating the Motion of Single Electron Wave Packets through Mesoscopic Devices", Proc. 1994 International Conference on Solid State Devices and Materials (SSDM)
G. Fasol, "Spontaneous Spin Polarization in Quantum Wires", Proc. 22nd International Conference on the Physics of Semiconductors (ICPS), edited by D. J. Lockwood, (World Scientific, Singapore, 1995), p. 1739-1742.
G. Fasol, Y. Nagamune, J. Motohisa und H. Sakaki, "Ballistic Electron Waves as a Detector of the Internal Potential under a Metal Gate", Proc. 22nd International Conference on the Physics of Semiconductors (ICPS), edited by D. J. Lockwood, (World Scientific, Singapore, 1995), p. 1645-1648.
Gerhard Fasol: "Quantum transport simulation for the design of ultra-small and ultra-fast semiconductor devices" "Nikkei-Science", (November 1995), pages A8-A9
Gerhard Fasol: "A new method for simulating coherent and ultrafast electrons in semiconductor devices" Seisan-Kenkyu, 47, 17 (1995)
Gerhard Fasol: "First time-dependent simulation of coherent quantum transport in strong magnetic fields" Proceedings of the 23rd International Conference on the Physics of Semiconductors, edited by M. Scheffler and R. Zimmermann, (World Scientific, Singapore, 1996) p. 1541-1544
Gerhard Fasol: "Novel Simulation Techniques for Semiconductor Devices (III): Quantum Device Simulation Technologies – Simulating Quantum Transport Dynamics using the Time Dependent Schrödinger Equation" Journal of the Japanese Institute of Electronics, Information and Communication Engineers, 82, p. 512-519 (May 1999) (in Japanese)
Gerhard Fasol: "R&D in Japan – Making the most of it" Journal of the American Chamber of Commerce in Japan, p. 9-17 (December 1997)
Gerhard Fasol: "Off-Broadway stages of research – – An interview by Gerhard Fasol with Dr. Genya Chiba, President of Japan’s Science and Technology Corporation" Physikalische Blätter, 53, p. 207-209 (March 1997)
Gerhard Fasol: "Japan verstärkt Grundlagenforschung, Japan increases fundamental research – An interview by Gerhard Fasol with Professor Akito Arima, President of RIKEN and Chairman onf Japan’s Central Educational Council" Physikalische Blätter, 52, p. 852-854 (September 1996)
Gerhard Fasol: "Our research laboratories – a long-term investment for the business of NTT – An interview by Gerhard Fasol with Dr. T. Ikegami, Senior Vice President of the Japanese telecommunications company NTT" Physikalische Blätter, 50, p. 393-395 (May 1994)
Gerhard Fasol: "Japanische Herbstkonferenzen in Angewandter Physics (Japan’s autumn conferences on applied physics)" Physikalische Blätter, 50, p. 1118-1119 (December 1994) (my first report on Shuji Nakamura’s GaN work in Germany’s Physikalische Blätter)